IRF6802SDTR1PBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRF6802SDTR1PBF

Description:

MOSFET 2N-CH 25V 16A SA

Stock:

22925

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

16A

Drain source voltage (Vdss)

25V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

13nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

1350pF @ 13V

On resistance (maximum) for different Ids and Vgs

4.2 mΩ @ 16A,10V

Power - maximum

1.7W

Vgs (th) (maximum) for different Ids

2.1V @ 35µA

packing

TR,CT

series

HEXFET®

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

DirectFET™ isovolume SA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRF6802SDTR1PBF（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22925,Price reference "real-time change" China/Hongkong。 IRF6802SDTR1PBF package/specs, Download IRF6802SDTR1PBF、Datasheet。